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| UNISONIC TECHNOLOGIES CO., LTD 2SD2136 POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. NPN SILICON TRANSISTOR FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. Lead-free: 2SD2136L Halogen-free:2SD2136G ORDERING INFORMATION Normal 2SD2136-x-T60-K Ordering Number Lead Free Plating 2SD2136L-x-T60-K Halogen Free 2SD2136G-x-T60-K Package TO-126 Pin Assignment 1 2 3 B C E Packing Bulk www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-011.B 2SD2136 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Peak Collector Current ICP 5 A Collector Dissipation PC 1.5 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified ) PARAMETER Collector-Base Breakdown Voltage Collect Cutoff Current Collect Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Turn On Time Storage Time Fall Time SYMBOL BVCEO ICEO ICES IEBO hFE1 hFE2 VCE(SAT) VBE fT tON tS tF TEST CONDITIONS IC=30mA, IB=0 VCE=60V, IB=0 VCE=60 V, VBE=0 VBE=6 V, IC=0 VCE=4V ,IC=1A VCE=4V ,IC=3A IC =3A, IB=0.375A VCE=4V ,IC=3A VCE=15V, IE=0.1A, f =200MHz IC = 1A, IB1 =0.1A, IB2 =0.1A MIN 60 TYP MAX UNIT V 300 A 200 A 1 mA 250 1.2 1.8 220 0.5 2.5 0.4 V V MHZ S S S 40 10 CLASSIFICATION OF hFE1 RANK RANGE P 40-90 Q 70-150 R 120-250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-011.B 2SD2136 TYPICAL CHARACTERISTICS 5 4 3 IC-VCE TC=25 Collector Current, IC (A) 90mA 80mA IB=100mA 70mA 60mA 50mA 40mA 30mA 20mA 1 10mA 0 0 2 4 6 8 10 Collector Emitter Voltage, VCE (V) PC - TA Without Head Sink Collector to Emitter Saturation Voltage, VCE(SAT) (V) 12 8 7 6 5 4 3 2 1 0 0 NPN SILICON TRANSISTOR IC - VBE VCE=4V TC=25 Collector Current, IC (A) TC=100 TC=-25 2 0.4 0.8 1.2 1.6 2.0 Base Emitter Voltage, VBE (V) VCE(SAT) - IC 2.4 2.0 Collector Power Dissipation, PC (W) 1.6 1.2 100 30 10 3 1 0.3 0.1 TC=100 TC=25 TC=-25 0.8 0.4 0 0 20 40 60 80 100 120 140 160 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Ambient Temperature, TA () hFE - IC VCE=4V Transtion Frequency, fT (MHZ) Collector Current, IC (A) fT - IC VCB=10V TC=25 f=200MHZ 10K Forward Current Transfer Ratio, hFE 3K 1K 0.3K 0.1K 300 250 200 150 100 50 TC=100 TC=25 TC=-25 30 10 3 1 0.01 0.03 0.1 0.3 1 3 Collector Current, IC (A) 10 0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R204-011.B 2SD2136 TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Thermal Resistance, RTH (t) (/W) Collector Current, IC (A) 4 of 4 QW-R204-011.B |
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